AD162 DATASHEET PDF

AD162 DATASHEET PDF

AD Datasheet PDF Download – Transistor, AD data sheet. Tube AD or Röhre AD ID, Transistor, SPECIAL TUBEBASE in general and Power/Output shown. Radio tubes are valves. AD Datasheet, AD PDF, AD Data sheet, AD manual, AD pdf, AD, datenblatt, Electronics AD, alldatasheet, free, datasheet, Datasheets, .

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The BD with its p-n-p complement BD is specially suitable for use in output stages of car radios.

A permissible area of operation under all conditions of base drive dataaheet the dissipation rating is not exceeded area 1 and an area where operation is allowable under certain specified conditions area 2.

Special care must be taken to ensure that thermal runaway due to excessive collector leakage current does not occur fatasheet this condition. The equipment manufacturer should design so that initially and throughout life no absolute maximum value for datsaheet intended service is exceeded with any device under the worst probable operating conditions with respect to variations in supply voltage, environment, equipment components, equipment control adjustment, load, signal or characteristics of the device under consideration and of all other devices in the equipment.

Conversely, for complementary pairs with a higher gain, the resultant negative feedback is increased and a higher h F E ratio will maintain the necessary protection against distortion.

These additions are as follows: Burrs or thickening at the edges of the holes must be removed and the transistor bolted down on a plane surface. FET enhancement mode VpigS s; 0, ll,s. af162

Iem The dxtasheet permissible instantaneous value of the total emitter current. The letter S is also used with three terminal devices as a third subscript to denote that the terminal not indicated in the subscript is shorted to the reference terminal. The rating also includes the switch off current.

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AD Datasheet PDF – Tesla Elektronicke

TO-1 construction with envelope isolated. If devices are stored above C before incorporation into equipmentsome deterioration of the external surface is likely to occur which may make soldering into the circuit difficult. Todetermine thevalueof this higher temperature, calculate the power at the new working point and its percentage of the maximum permissible power at the same duty cycle and pulse width as read from the relevant constant power line.

Torque on nut for good heat transfer: In general, the data provides SOAR curves for pulse durations in multiples of 1, 2, 5, and 10, starting at pulse durations in the region 10 to 50,us. The emitter voltage is negative w. In many applications, however, the reverse-bias breakdown characteristics are also of importance.

T m i, The temperature of the surface making contact with a heatsink. I 1 i i i i typical values. SB 7.

Datasheeets & Application Notes

Encapsulated in a TO -3 envelope. A further linear interpolation between the two 1 -7ms areas is then needed to approximate to the 1 -7ms SOAR at dagasheet cycle of S essential to ensure thermal stability of input stage at Ratasheet max. Each pulse is then checked individually.

E AV I, max. In second breakdown the device offers only a very low resistance to collector current, and is invariably destroyed if the current is not specially limited by a circuit external to the transistor.

CM I n max. More accurate calculations can be made by going back to first principles, and calculating the multiplying factor for the specific condition, f 1 ‘ ‘TP reprinted from MTC No.

Under these circumstances the leads should be re-tinned using dataheet activated flux. With reverse bias on the base, second breakdown is always preceded by first- breakdown. The permissible total power dissipation is dependent upon temperature dahasheet its relationship is shown by means of a chart as shown in figure 3.

The thermal capacity of the heatsink will be such that the transient effect of the power will be averaged. List of Datasjeet for Light Current Semiconductor Devices This section gives the main symbols used in quoting ratings and characteristics of Semiconductor Devices.

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These types belong to the family of extrusions which has been used with Mullard power devices requiring special heatsink considerations, such as thyristor stacks and power rectifiers.

Underthesecircumstancesthe leads should be returned using a suitable activated flux.

Temperature T ar162, min. The second and third letter s indicate the general class of device: The data contained in these books are as accurate and up to date as it is reasonably possible to make them at the time of going to press.

This rating is very dependent on circuit conditions dataxheet collector current and it is necessary to refer to the curve of Vce versus lc for the appropriate circuit condition in order to obtain the correct rating Vce max Cut-off The maximum permissible instantaneous voltage between collector and emitter terminals when the emitter current is datasheeet to zero by means of a reverse emitter base voltage, i.

The nomogram is ‘operated as follows, with reference to the simplified curves in Fig. The letter V is used to denote a decimal sign.

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See page 4 and BD data sheet. Hole spacing in either type oi grid allows the insertion of the “Lockfit” pins; but as the holes of the closely spaced t-grid are necessarily of smaller diameter than those of the other grid, the pins cannot be or should not be pushed in catasheet the middle expansion – lock ‘A’.

The point defined by the mounting-base temperature and the total dis- sipation must lie within the permissible area of operation on the curve onpageC Storage time is measured in the following circuit: